r07ds0181ej0100 rev.1.00 page 1 of 6 dec 22, 2010 preliminary data sheet np180n055tuj mos field effect transistor description the np180n055tuj is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance ? r ds(on) = 2.3 m max. (v gs = 10 v, i d = 90 a) ? low ciss: ciss = 9500 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package NP180N055TUJ-E1-AY ? 1 to-263-7pin, taping (e1 type) np180n055tuj-e2-ay ? 1 pure sn (tin) tape 800 p/reel to-263-7pin, taping (e2 type) note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 180 a drain current (pulse) ? 1 i d(pulse) 720 a total power dissipation (t c = 25 c) p t1 348 w total power dissipation (t a = 25 c) ? 2 p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 66 a repetitive avalanche energy ? 3 e ar 435 mj thermal resistance channel to case thermal resistance r th(ch-c) 0.43 c/w channel to ambient thermal resistance ? 2 r th(ch-a) 83.3 c/w notes: ? 1. t c = 25 c, pw 10 s, duty cycle 1% ? 2. mounted on glass epoxy subs trate of 40 mm x 40 mm x 0.8 mmt ? 3. t ch(peak) 150 c, r g = 25 r07ds0181ej0100 rev.1.00 dec 22, 2010
np180n055tuj chapter title r07ds0181ej0100 rev.1.00 page 2 of 6 dec 22, 2010 electrical characteristics (t a = 25 c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 1 a v ds = 55 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2.0 3.0 4.0 v v ds = v gs , i d = 250 a forward transfer admittance ? 1 | y fs | 65 130 s v ds = 5 v, i d = 90 a drain to source on-state resistance ? 1 r ds(on) 1.7 2.3 m v gs = 10 v, i d = 90 a input capacitance c iss 9500 14250 pf v ds = 25 v, output capacitance c oss 1060 1590 pf v gs = 0 v, reverse transfer capacitance c rss 320 580 pf f = 1 mhz turn-on delay time t d(on) 45 100 ns v dd = 28 v, i d = 90 a, rise time t r 20 50 ns v gs = 10 v, turn-off delay time t d(off) 100 200 ns r g = 0 fall time t f 10 30 ns total gate charge q g 150 230 nc gate to source charge q gs 35 nc gate to drain charge q gd 45 nc v dd = 44 v, v gs = 10 v, i d = 180 a body diode forward voltage ? 1 v f(s-d) 0.9 1.5 v i f = 180 a, v gs = 0 v reverse recovery time t rr 64 ns reverse recovery charge q rr 138 nc i f = 180 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
np180n055tuj chapter title r07ds0181ej0100 rev.1.00 page 3 of 6 dec 22, 2010 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 50 100 150 200 250 300 350 400 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(dc) power dissipation limited r d s ( o n ) l i m i t e d ( v g s = 1 i 0 v ) i d(pulse) p w = 1 i 0 0 s 1 i m i s 1 i 0 m i s t c = 25 c single pulse v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.001 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w i r th(ch-c) = 0.43 c/w i single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
np180n055tuj chapter title r07ds0181ej0100 rev.1.00 page 4 of 6 dec 22, 2010 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a 0 100 200 300 400 500 600 700 800 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v gs = 10 v pulsed v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 0123456 v ds = 10 v pulsed t a = ? 55 c 25 c 75 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0.0 1.0 2.0 3.0 4.0 -100 -50 0 50 100 150 200 v ds = v gs i d = 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 1000 1 10 100 1000 v ds = 5 v pulsed t a = ? 55 c 25 c 75 c 150 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 1 10 100 1000 v gs = 10 v pulsed i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 0 5 10 15 20 25 pulsed i d = 180 a 90 a 36 a v gs - gate to source voltage - v
np180n055tuj chapter title r07ds0181ej0100 rev.1.00 page 5 of 6 dec 22, 2010 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0.0 1.0 2.0 3.0 4.0 5.0 -100 -50 0 50 100 150 200 pulsed v gs = 10 v i d = 90 a t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 100000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 1000 t r t d(off) t d(on) t f v dd = 20 v v gs = 10 v r g = 0 i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 v ds i d = 180 a v dd = 44 v v gs 11 v 28 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. drain current i f - diode forward current - a 0.1 1 10 100 1000 00.511.5 v gs = 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 10 100 0.1 1 10 100 1000 di/dt = 100 a/ s v gs = 0 v i f - drain current - a
np180n055tuj chapter title r07ds0181ej0100 rev.1.00 page 6 of 6 dec 22, 2010 package drawings (unit: mm) to-263-7pin (mp-25zt) (mass: 1.5 g typ.) 8.4 typ. 10.0 0.2 7.6 typ. 8 9.15 0.2 14.85 0.5 1.2 0.3 1.27 typ. 0.6 0.15 2.5 10.0 0.2 123 5 467 4.45 0.2 1.3 0.2 0.025 to 0.25 0.5 0.2 0 to 8 0.25 2.54 0.25 1. gata 2, 3, 5, 6, 7. source 4, 8. fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np180n055tuj data sheet description rev. date page summary 1.00 dec 22, 2010 ? first edition issued
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